Electrical and structural properties of aln/gan and algan/gan heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, T. G. Yugova et al. The electrical and structural properties of AlN/GaN heterostructures grown by molecular beam epitaxy on sapphire are compared with those of AlGaN/GaN heterostructures. The structural characteristics as assessed by x-ray diffraction show little difference but the electron density in the two-dimension ... [J. Appl. Phys. 104, 053702 (2008)] published Wed Sep 3, 2008. (Source: Journal of Applied Physics)