The initial atomic layer deposition of hfo[sub 2]/si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

Massimo Tallarida, Konstantin Karavaev, and Dieter Schmeisser We have grown HfO on Si(001) by atomic layer deposition (ALD) using HfCl and HO as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and x-ray absorption spectroscopy. We observed the changes occurring in the Si2p, O1s, Hf4f, Hf4d, and Cl2p cor ... [J. Appl. Phys. 104, 064116 (2008)] published Thu Sep 25, 2008. (Source: Journal of Applied Physics)