Interaction of low-energy nitrogen ions with gaas surfaces

Z. Majlinger, A. Bozanic, M. Petravic, K.-J. Kim, B. Kim et al. We have studied the interaction of low-energy nitrogen ions (0.32 keV N) with GaAs (100) surfaces by photoemission spectroscopy (PES) around N 1s and Ga 3d core levels and near-edge x-ray absorption fine structure (NEXAFS) around the N K edge. At the lowest bombardment energy, nitrogen forms bonds ... [J. Appl. Phys. 104, 063527 (2008)] published Fri Sep 26, 2008. (Source: Journal of Applied Physics)