Friday, October 3, 2008

Structural, electrical, and optical properties of inas[sub x]sb[sub 1 - x] epitaxial films grown by liquid-phase epitaxy

Fubao Gao, NuoFu Chen, X. W. Zhang, Yu Wang, Lei Liu et al. The InAsSb films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAsSb films with a midrange composition are epitaxially grown on ... [J. Appl. Phys. 104, 073712 (2008)] published Thu Oct 2, 2008. (Source: Journal of Applied Physics)

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